SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors -

Abstract

This Test Method covers the measurement of generation lifetime and generation velocity of silicon wafers.
 

The measurement requires the fabrication of a guard-ring MOS capacitor (refer to Figure 1). This Test Method is therefore destructive to the silicon wafer.
 

This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this Test Method.
 

Both p- and n-type silicon in the dopant density range from 1013 cm3 to 1017 cm3 can be evaluated by this Test Method. The approximate range of generation lifetime that can be measured is 1 µs to 10 ms.
 

The Test Method is applicable to both bulk and epitaxial silicon. If epitaxial silicon is used, the epitaxial layer must be of the same conductivity type as the substrate and should be at least twice as thick as the maximum depletion width in deep depletion to avoid errors caused by the proximity of the epitaxial interface (refer to ¶ 12.4).
 

It is necessary to complete the measurements described in SEMI MF1153 before performing the measurements described in this Test Method to determine the values of maximum capacitance, equilibrium minimum capacitance, and dopant density.
 

A digital computer capable of controlling the instruments and recording data is required and significantly simplifies and improves the accuracy of the data acquisition and analysis process.

Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology

Revision History
SEMI MF1388-0707 (Reapproved 1023)
SEMI MF1388-0707 (Reapproved 0718)
SEMI MF1388-0707 (Reapproved 0412)
SEMI MF1388-0707 (technical revision)
SEMI MF1388-1106 (technical revision)
SEMI MF1388-92 (Reapproved 2000) (first SEMI publication)

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