SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle -

Member Price: $138.00
Non-Member Price: $180.00

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
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Revision: SEMI MF1619-1107 (Reapproved 1023) - Current

Revision

Abstract

 

This Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy. In this Test Method, the incident radiation is p-polarized and incident on the test specimen at the Brewster angle in order to minimize multiple reflections. 
 

Since the interstitial oxygen concentration is proportional to the absorption coefficient of the 1107 cm1 absorption band, the interstitial oxygen content of the wafer can be derived directly using an independently determined calibration factor.
 

The test specimen is a single-side polished silicon wafer of the type specified in SEMI M1. The front surface of the wafer is mirror polished and the back surface may be as-cut, lapped, or etched with rms roughness less than 0.9 µm (refer to ¶ 8.1.1.1).
 

This Test Method is applicable to silicon wafers with resistivity greater than 5 Ω·cm at room temperature.

 

Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline

 

Revision History
SEMI MF1619-1107 (Reapproved 1023)
SEMI MF1619-1107 (Reapproved 0718)
SEMI MF1619-1107 (Reapproved 0912)
SEMI MF1619-1107 (technical revision)
SEMI MF1619-1105 (technical revision)
SEMI MF1619-95 (Reapproved 2000)E1 (first SEMI publication)

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