SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities -

Abstract

This Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon.
 
 

This Test Method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5 ppba for each of the electrically active elements.
 
 

The concentration for each impurity/dopant can be obtained by application of Beer’s Law. Calibration factors are given for each element.

Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for the Silicon Technology
SEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1723 — Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy

Revision History
SEMI MF1630-1107 (Reapproved 1123)
SEMI MF1630-1107 (Reapproved 0718)
SEMI MF1630-1107 (Reapproved 0912)
SEMI MF1630-1107 (technical revision)
SEMI MF1630-0704 (technical revision)
SEMI MF1630-00 (first SEMI publication)

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