- SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots
This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 31, 2015. Available at www.semiviews.org and www.semi.org in November 2015; originally published by ASTM International as ASTM F1725-97; previously published November 2010.
The use of silicon wafers in many semiconductor devices requires a consistent atomic lattice structure. Crystal defects disturb local lattice energy conditions that are the basis for semiconductor behavior. These defects have distinct effects on essential semiconductor device-manufacturing processes such as alloying and diffusion.
This Practice provides guidance regarding procedures for analysis of crystal defects of silicon ingots from which silicon wafers are cut.
This Practice together with the referenced standards may be used for process control, research and development, and materials acceptance purposes.
This Practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.
This Practice is suitable for use in evaluating silicon grown in either the  or the  direction and doped either p- or n-type with resistivity greater than 0.005 Ω·cm.
Referenced SEMI Standards
SEMI C18 — Specification for Acetic Acid
SEMI C28 — Specifications for Hydrofluoric Acid
SEMI C35 — Specifications and Guideline for Nitric Acid
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductor Single Crystal
SEM MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
SEMI MF1810 — Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers