SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots -
Abstract
NOTICE: This Document was reapproved with minor editorial
changes.
The use of silicon wafers in many semiconductor devices
requires a consistent atomic lattice structure. Crystal defects disturb local
lattice energy conditions that are the basis for semiconductor behavior. These
defects have distinct effects on essential semiconductor device-manufacturing
processes such as alloying and diffusion.
This Practice provides guidance regarding procedures for
analysis of crystal defects of silicon ingots from which silicon wafers are
cut.
This Practice together with the referenced standards may be
used for process control, research and development, and materials acceptance
purposes.
This Practice covers the analysis of the crystallographic
perfection in silicon ingots. The steps described are sample preparation,
etching solution selection and use, defect identification, and defect counting.
This Practice is suitable for use in evaluating silicon
grown in either the [111] or the [100] direction and doped either p- or n-type
with resistivity greater than 0.005 Ω·cm.
Referenced SEMI Standards (purchase separately)
SEMI C18 — Specification for Acetic Acid
SEMI C28 — Specification for Hydrofluoric Acid
SEMI C35 — Specification and Guide for Nitric Acid
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of
a Semiconductor Single Crystal
SEM MF523 — Practice for Unaided Visual Inspection of
Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use of Etching
Solutions to Delineate Structural Defects in Silicon
SEMI MF1810 — Test Method for Counting Preferentially
Etched or Decorated Surface Defects in Silicon Wafers
Revision History
SEMI MF1725-1110 (Reapproved 0322)
SEMI MF1725-1110 (Reapproved 1115)
SEMI MF1725-1110 (technical revision)
SEMI MF1725-1103 (first SEMI publication)
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