SEMI MF1810 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers -

Abstract

Defects on or in silicon wafers may adversely affect device performance and yield.

 

Crystal defect analysis is a useful technique in troubleshooting device process problems. The type, location, and density of defects counted by this Test Method may be related to the crystal growth process, surface preparation, contamination, or thermal history of the wafer.

 

This Test Method is suitable for acceptance testing when used with referenced standards.

This Test Method describes the technique to count the density of surface defects in silicon wafers by microscopic analysis.

 

Application of this Test Method is limited to specimens that have discrete, identifiable artifacts on the surface of the silicon sample. Typical samples have been preferentially etched according to SEMI MF1809 or epitaxially deposited, forming defects in a silicon layer structure.

 

Wafer thickness and diameter for this Test Method is limited only by the range of microscope stage motions available.

 

This Test Method is applicable to silicon wafers with defect density between 0.01 and 10,000 defects per cm².

 

Referenced SEMI Standards (purchase separately)

SEMI M59 — Terminology of Silicon Technology

SEMI MF1725 — Practice for Analysis of Crystallographic Perfection of Silicon Ingots

SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers

SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

SEMI MF1809 — Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

 

Revision History

SEMI MF1810-1110 (Reapproved 0222)

SEMI MF1810-1110 (Reapproved 1115)

SEMI MF1810-1110 (technical revision)

SEMI MF1810-0304 (technical revision)

SEMI MF1810-97 (Reapproved 2002) (first SEMI publication)

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