SEMI P27 - Parameter Checklist for Resist Thickness Measurement on a Substrate
This checklist was technically approved by the Global Micropatterning Committee and is the direct responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese Regional Standards Committee on April 28, 2003. Initially available at www.semi.org June 2003; to be published July 2003. Originally published in 1996.
NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use.
This checklist identifies the parameters for the thickness measurement of single layer resist on a substrate. Several methods are known for the thickness measurement of thin films, among them two methods are widely used for the thickness measurement of resist films.
They are the surface profilemeters which use mechanical contact method to detect the topology of a surface, and the light interference method which can be used only for transparent films.
The contacting method has more accuracy than light interference method, but the precision of the measurement is limited. The light interference method shows much more precision than the other but the results depend on measuring conditions.
This guideline describes on the parameters for the thickness measurement of single layer resist in lithography process.
For example, pre-expose resist thickness measurement on a bare silicon wafer for the QC of an optical resist, or the resist thickness measurement of partially exposed and fully exposed films after development for the determination of a characteristic curve of a resist.
Referenced SEMI Standards
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