SEMI PV13 - Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor -
Abstract
The excess-charge-carrier (hereafter referred to as
‘excess-carrier’) recombination lifetime is the central parameter to silicon
solar cell device design, production, and process control. The measurement of
this lifetime as it depends on excess-carrier density yields physically
significant results, which allows for design optimization and efficiency
prediction in solar cells. The Test Method also describes how this
recombination lifetime can be further analyzed in terms of more fundamental
parameters of importance to solar cells, such as the bulk lifetime, surface
recombination velocity, or the emitter saturation current density of the dopant
diffusion. This Test Method includes measurement by quasi-steady-state
photoconductance (QSSPC) and transient techniques using an eddy-current sensor.
This Standard describes methods for measuring the excess-carrier
lifetime in silicon wafers, ingots, and bricks with carrier recombination
lifetime in the range of 0.1 to 15,000 µs.
The measurements are applicable in the excess-carrier
density range from 1 × 1013 cm−3 to 2 × 1016 cm−3 for
wafer specimens, and 1 × 1013 cm−3 to 5 × 1015 cm−3 for
bulk specimens (thicker than 1 cm).
The method described here is used for specimens with
resistivity in the range from 0.1 Ω∙cm to 10000 Ω∙cm.
This Standard describes four measurement methodologies: two
each for the assessment of wafered or bulk silicon specimens. All measurement
techniques are performed using an inductive-coil (eddy-current) sensor
energized at a radio frequency and an illumination source. Two of the methods
use a QSSPC technique that requires a light-intensity detector to measure the
photogeneration. The scope of this Document also addresses the calibration
method to be used.
Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF28 — Test Method for Minority Carrier Lifetime in
Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
SEMI MF43 — Test Method for Resistivity of Semiconductor
Materials
SEMI MF84 — Test Method for Measuring Resistivity of
Silicon Wafers With an In-Line Four-Point Probe
SEMI MF533 — Test Method for Thickness and Thickness
Variation of Silicon Wafers
SEMI MF723 — Practice for Conversion Between Resistivity
and Dopant Density for Boron-Doped, Phosphorus-Doped and Arsenic-Doped Silicon
Revision History
SEMI PV13-0714 (Reapproved 0121)
SEMI PV13-0714 (technical revision)
SEMI PV13-0813 (technical revision)
SEMI PV13-1111 (technical revision)
SEMI PV13-0211 (first published)
Interested in purchasing additional SEMI Standards? Consider SEMIViews, an online portal with access to over 1000 Standards. |
Refund Policy: Due to the nature of our products, SEMI has a no refund/no exchange policy. Please make sure that you have reviewed your order prior to finalizing your purchase. All sales are final.
This product has no reviews yet.