SEMI PV22 - 太陽光電池用シリコンウェーハの仕様

Volume(s): Photovoltaic
Language: Japanese
Type: Single Standards Download (.pdf)
Abstract

本スタンダードは,global Photovoltaic Committeeで技術的に承認されている。現版は2011912日,global Audits and Reviews Subcommitteeにて発行が承認された。201110月にwww.semiviews.orgおよび www.semi.orgで入手可能となる。

 

本仕様は光起電性(PV)太陽光電池の製造に使われるシリコンウェーハに対する要求事項について取扱う。多数の製造ラインに使われるプロセス装置を共通にするためには,ウェーハ寸法を標準化することが必須である。

 

本仕様は現在光起電性用途に広く使われているサイズを基本にしたシリコンウェーハの標準化された寸法およびある他の共通特性を備えている。

 

本仕様は発注のための表形式仕様書式も備えているので,今現在は標準的でないウェーハ特性および研究・開発用のウェーハサイズへの拡大や新しい要求が商業取引で簡単にかつ矛盾なく指定できる。

 

Referenced SEMI Standards

SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection


SEMI M44 — Guide to Conversion Factors for Interstitial Oxygen in Silicon


SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Depositions of Monodisperse Polystyrene Latex Sphere on Unpatterned Semiconductor Wafer Surfaces


SEMI M58 — Test Method for Evaluating DMA-Based Particle Deposition Systems and Processes


SEMI M59 — Terminology for Silicon Technology


SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal


SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials


SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe


SEMI MF391 — Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage


SEMI MF533 — Test Method for Thickness and Thickness of Variation of Silicon Wafers


SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning


SEMI MF673 — Test Methods for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage


SEMI MF847 — Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques


SEMI MF978 — Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques


SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi Substrates by Secondary Ion Mass Spectrometry


SEMI MF1810 — Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers


SEMI MF1982 — Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography


SEMI PV1 — Test Method for Measuring Trace Elements in Silicon Feedstock for Silicon Solar Cells by High-Mass Resolution Glow Discharge Mass Spectrometry


SEMI PV9 — Test Method for Excess Charge Carrier Decay in PV Silicon Materials by Non-Contact Measurements of Microwave Reflectance After a Short Illumination Pulse


SEMI PV13 — Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor



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