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E08100 - SEMI E81 - Provisional Specification for CIM Framework Domain Architecture
SEMI E81 - Provisional Specification for CIM Framework Domain Architecture Sale priceMember Price: $148.00
Non-Member Price: $193.00
E07400 - SEMI E74 - Specification for Vacuum Pump Interfaces - Turbomolecular Pumps
SEMI E74 - Specification for Vacuum Pump Interfaces - Turbomolecular Pumps Sale priceMember Price: $148.00
Non-Member Price: $193.00
E05300 - SEMI E53 - Event Reporting
SEMI E53 - Event Reporting Sale priceMember Price: $148.00
Non-Member Price: $193.00
E04701 - SEMI E47.1 - 300 mmウェーハ搬送および保管用FOUPの機械仕様
SEMI E47.1 - 300 mmウェーハ搬送および保管用FOUPの機械仕様 Sale priceMember Price: $176.00
Non-Member Price: $231.00
E03200 - SEMI E32 - Material Movement Management (MMM)
SEMI E32 - Material Movement Management (MMM) Sale priceMember Price: $148.00
Non-Member Price: $193.00
S01700 - SEMI S17 - 無人搬運車(UTV)系統之安全基準
SEMI S17 - 無人搬運車(UTV)系統之安全基準 Sale priceMember Price: $148.00
Non-Member Price: $193.00
S01300 - SEMI S13 - 製造装置と共に使用することが意図された装置ユーザへの提供文書のための環境,健康,安全ガイドライン
PV08000 - SEMI PV80 - Specification of Indoor Lighting Simulator Requirements for Emerging Photovoltaic and Perovskite Solar Cell (PSC)
PV07600 - SEMI PV76 - Test Method for Durability of Low Light Intensity Organic Photovoltaic (OPV) and Dye-Sensitized Solar Cell (DSSC) and Perovskite Solar Cell (PSC)
PV07500 - SEMI PV75 - Test Method on Cell Level for Potential-Induced Degradation Susceptibility of Solar Cells and Module Encapsulation Materials
PV05400 - SEMI PV54 - Specification for Silver Paste, Used to Contact with N+ Diffusion Layer of Crystalline Silicon Solar Cells
PV05100 - SEMI PV51 - Test Method for In-Line Characterization of Photovoltaic Silicon Wafers by Using Photoluminescence
P04000 - SEMI P40 - Specification for Mounting Requirements for Extreme Ultraviolet Lithography Masks
MF057600 - SEMI MF576 - Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
MF037400 - SEMI MF374 - Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
MF180900 - SEMI MF1809 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities
MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
MF145100 - SEMI MF1451 - Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning
MF139200 - SEMI MF1392 - Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
MF118800 - SEMI MF1188 - Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
M05000 - SEMI M50 - Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method
M03500 - SEMI M35 - Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection