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1213 products

P01000 - SEMI P10 - Specification of Data Structures for Photomask Orders
SEMI P10 - Specification of Data Structures for Photomask Orders Sale priceMember Price: $144.00
Non-Member Price: $187.00
3D02000 - SEMI 3D20 - Specification for Panel Characteristics for Panel Level Packaging (PLP) Applications
S03000 - SEMI S30 - Safety Guideline for Use of Energetic Materials in Semiconductor R&D and Manufacturing Processes
G08400 - SEMI G84 - Specification for Strip Map Protocol
SEMI G84 - Specification for Strip Map Protocol Sale priceMember Price: $144.00
Non-Member Price: $187.00
3D01900 - SEMI 3D19 - Test Method for Adhesive Strength of Adhesive Tray Used for Thin Chip Handling
F07100 - SEMI F71 - ガス供給システムの温度サイクル試験方法
SEMI F71 - ガス供給システムの温度サイクル試験方法 Regular price$300.00 USD Sale price$224.00 USD
M07600 - SEMI M76 - 開発用直径450 mmシリコン単結晶鏡面ウェーハの仕様
M07600 - SEMI M76 - Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers
M04900 - SEMI M49 - 130 nmから65 nmへの技術世代のシリコンウェーハ用ジオメトリ測定システム規定のためのガイド
M03900 - SEMI M39 - 半絶縁GaAs単結晶の抵抗率及びホール係数を測定しホール移動度を決定する方法
M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals
M03700 - SEMI M37 - 低転位密度Inp基板のエッチピット密度(EPD)測定方法
SEMI M37 - 低転位密度Inp基板のエッチピット密度(EPD)測定方法 Sale priceMember Price: $171.00
Non-Member Price: $224.00
M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers
M03600 - SEMI M36 - 低転位密度GaAs基板のエッチピット密度(EPD)測定方法
SEMI M36 - 低転位密度GaAs基板のエッチピット密度(EPD)測定方法 Sale priceMember Price: $171.00
Non-Member Price: $224.00
M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers
M02600 - SEMI M26 - ウェーハの運搬に使用される100 mm,125 mm,150 mm,200 mmウェーハシッピングボックスの再利用ガイド
M01900 - SEMI M19 - バルク・ガリウムヒ素単結晶基板の電気的性質(仕様)
SEMI M19 - バルク・ガリウムヒ素単結晶基板の電気的性質(仕様) Sale priceMember Price: $171.00
Non-Member Price: $224.00
M01900 - SEMI M19 - Specification for Electrical Properties of Bulk Gallium Arsenide Single Crystal Substrates
M01800 - SEMI M18 - シリコンウェーハ発注仕様書開発のガdイド
SEMI M18 - シリコンウェーハ発注仕様書開発のガdイド Sale priceMember Price: $171.00
Non-Member Price: $224.00
M01500 - SEMI M15 - 半絶縁ガリウムヒ素ウェーハ用の鏡面ウェーハの許容表面欠陥表
M01500 - SEMI M15 - Polished Wafer Defect Limits Table for Semi-Insulating Gallium Arsenide Wafers
M01400 - SEMI M14 - 半絶縁ガリウムヒ素単結晶のためのイオン注入及び活性化プロセス(仕様)
M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals
M00100 - SEMI M1 - 鏡面単結晶シリコンウェーハの仕様
SEMI M1 - 鏡面単結晶シリコンウェーハの仕様 Sale priceMember Price: $334.00
Non-Member Price: $444.00
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