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M07700 - SEMI M77 - ロールオフ量(ROA)を使ってウェーハのエッジ近傍形状を決定するための作業方法
M07700 - SEMI M77 - Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA
M07500 - SEMI M75 - Specification for Polished Monocrystalline Gallium Antimonide Wafers
SEMI M75 - Specification for Polished Monocrystalline Gallium Antimonide Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M07400 - SEMI M74 - Specification for 450 mm Diameter Mechanical Handling Polished Wafers
SEMI M74 - Specification for 450 mm Diameter Mechanical Handling Polished Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M07300 - SEMI M73 - Test Method for Extracting Relevant Characteristics from Measured Wafer Edge Profiles
M07100 - SEMI M71 - Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI
SEMI M71 - Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI Sale priceMember Price: $144.00
Non-Member Price: $187.00
M07100 - SEMI M71 - CMOS LSI用シリコン・オン・インシュレーター(SOI)ウェーハのための仕様
M07000 - SEMI M70 - パーシャルサイト平坦度を使ってウェーハのエッジ近傍形状を決定するための作業方法
M07000 - SEMI M70 - Test Method for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness
M06800 - SEMI M68 - 測定した高さデータ配列から曲率法ZDDを使ってウェーハのエッジ近傍形状を決定するための作業方法
M06800 - SEMI M68 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD
M06700 - SEMI M67 - Test Method for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR Metrics
M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique
M06600 - SEMI M66 - MISフラットバンド電圧―絶縁膜厚法を使った,酸化膜,およびhigh-κゲートスタックの有効仕事関数の算出方法
M06500 - SEMI M65 - Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
M06500 - SEMI M65 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様
M06400 - SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy
M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁(SI)ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法
M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
M06300 - SEMI M63 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様
M06200 - SEMI M62 - Specification for Silicon Epitaxial Wafers
SEMI M62 - Specification for Silicon Epitaxial Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M00600 - SEMI M6 - 太陽光電池用シリコンウェーハの仕様
SEMI M6 - 太陽光電池用シリコンウェーハの仕様 Sale priceMember Price: $171.00
Non-Member Price: $180.00
M06100 - SEMI M61 - 埋め込み層付きシリコンエピタキシャルウェーハの仕様
SEMI M61 - 埋め込み層付きシリコンエピタキシャルウェーハの仕様 Sale priceMember Price: $171.00
Non-Member Price: $224.00
M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers
SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Sale priceMember Price: $144.00
Non-Member Price: $187.00