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MF104900 - SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers
SEMI MF1049 - Practice for Shallow Etch Pit Detection on Silicon Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
ME139200 - SEMI ME1392 - Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces
M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods
M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications
M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy
M08000 - SEMI M80 - Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers
M07900 - SEMI M79 - Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications
M07700 - SEMI M77 - ロールオフ量(ROA)を使ってウェーハのエッジ近傍形状を決定するための作業方法
M07500 - SEMI M75 - Specification for Polished Monocrystalline Gallium Antimonide Wafers
SEMI M75 - Specification for Polished Monocrystalline Gallium Antimonide Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M07400 - SEMI M74 - Specification for 450 mm Diameter Mechanical Handling Polished Wafers
SEMI M74 - Specification for 450 mm Diameter Mechanical Handling Polished Wafers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M07100 - SEMI M71 - CMOS LSI用シリコン・オン・インシュレーター(SOI)ウェーハのための仕様
M07000 - SEMI M70 - パーシャルサイト平坦度を使ってウェーハのエッジ近傍形状を決定するための作業方法
M06600 - SEMI M66 - Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique
M06600 - SEMI M66 - MISフラットバンド電圧―絶縁膜厚法を使った,酸化膜,およびhigh-κゲートスタックの有効仕事関数の算出方法
M06500 - SEMI M65 - Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers
M06500 - SEMI M65 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様
M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁(SI)ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法
M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction
M06300 - SEMI M63 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様
M00600 - SEMI M6 - 太陽光電池用シリコンウェーハの仕様
SEMI M6 - 太陽光電池用シリコンウェーハの仕様 Sale priceMember Price: $171.00
Non-Member Price: $180.00
M06100 - SEMI M61 - 埋め込み層付きシリコンエピタキシャルウェーハの仕様
SEMI M61 - 埋め込み層付きシリコンエピタキシャルウェーハの仕様 Sale priceMember Price: $171.00
Non-Member Price: $224.00
M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers
SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Sale priceMember Price: $144.00
Non-Member Price: $187.00
M06000 - SEMI M60 - Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation
M06000 - SEMI M60 - シリコンウェーハ評価のためのSiO2の経時絶縁破壊特性の試験方法